国家/地区 韩国（5） 美国（2）
IPC部 C（5）
IPC大类 C01（5） H01（4） B82（2）
H05（2）
IPC小类 C01B（5）
IPC C01B031/02（5） B82B001/00（2） B82B003/00（2）
H01L051/50（2）
发明人 HONG J（2） HONG J M（2） KIM C K（2）
KIM S I（2） KIM Y H（2） KIM Y T（2）
LIM J A（2） SONG Y（2） SONG Y W（2）
公开年 2014（5）
申请年 2013（3） 
专利权人 KOREA INST SCI TECHNOLOGY（5）

Formation of reduced graphene oxide used for electronic device e.g. thin film transistor, involves forming graphene oxide on substrate, and providing graphene oxide with white light pulse to reduce graphene oxide.

LIM J A, SONG Y, HONG J, CHANG J Y, SONG Y W, HONG J M

Manufacture of high quality graphene for high quality graphene film and electronic material, involves filling carbon rod, graphite powder and metal catalyst, filling buffer gas into reaction chamber, and evaporating in reaction chamber.

KIM M J, OH I S, KU B C

Organic electroluminescent device comprises an anode, a hole injection layer, a light emitting layer, an electron injection layer and a cathode stacked on a substrate, and graphene oxide on hole injection layer or electron injection layer.

SHIN S B, KIM S I, KIM Y H, KIM C K, KIM J Y, KIM Y T

Manufacture of graphene electric component involves transferring metal protective layer and transfer layer to target substrate, removing exposed metal protection layer, and depositing secondary metal on metal protection layer.

KIM Y H, KIM S I, KIM Y T, KIM C K

Making nanoparticles of target material, involves mixing graphene oxide with aqueous solvent to give aqueous solution, mixing target material with organic solvent to give organic solution, and mixing aqueous solution with organic solution.

LIM J A, SONG Y, HONG J, YOO D Y, KIM H, SONG Y W, HONG J M, KIM H S