国家/地区 美国（5） 韩国（4）
IPC部 B（5）
IPC大类 B32（5）
IPC小类 B32B（5）
IPC B82Y030/00（5） B82Y040/00（4） C01B031/02（4）
H01B001/04（3） B32B009/00（2） B32B018/00（2）
B32B037/02（2） C01B031/04（2） C23C016/26（2）
发明人 SHIN H J（5）
公开年 2012（5）
申请年 2012（4） 
专利权人 SAMSUNG ELEC.（5）

Preparing graphene-layered structure e.g. epitaxial structure that is useful in e.g. transistor, by implanting nitrogen and oxygen ions on surface of silicon carbide thin film to form ion implantation layer and heat treating the film.

SHIN H, CHOI J, AHN J, SEO J, AHN J R, CHOI J Y, SEO J T, SHIN H J

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Method for transferring graphene sheet to device involves forming binder layer on graphene sheet on which carbonization catalyst is formed, exfoliating carbonization catalyst and transferring graphene sheet to device.

SHIN H J, CHOI J, YOON S

Controlling number of graphene layers to form mono/bilayer graphene, used e.g. in sensor, comprises forming graphene on first surface of first substrate, forming second substrate on second surface of first substrate and irradiating graphene.

SHIN H, CHOI J, HAN G, LEE Y, CHOI J Y, HAN G H, LEE Y H, SHIN H J