国家/地区 美国（5） 韩国（3） 欧洲专利局（EPO）（2） 世界知识产权组织（2）
IPC部 B（5）
IPC大类 B32（5）
IPC小类 B32B（5）
IPC C01B031/00（5）
发明人
公开年 2015（5）
申请年 2014（2）  2015（2） 
专利权人

Solid state device structure for graphene device for use in microelectronics application, has single crystalline graphene monolayer placed on substrate including surface area of greater than specific range.

DIMITRAKOPOULOS C D, FOGEL K E, KIM J, PARK H

Method for producing bulk highly oriented graphene structure that is utilized in thermal management device e.g. heat dissipation plate, involves preparing graphene oxide dispersion, and dispensing and depositing graphene oxide dispersion.

ZHAMU A, JANG B Z, WANG Y, FU L

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Composite panel comprises a layer of material comprising a polymeric matrix material, and a large area graphene sheet embedded in the layer of material, where the large area graphene sheet includes nanoperforations.

BULLOCK S E, NEWELL C M

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V