国家/地区 日本（4）
IPC部 B（4）
IPC大类 B32（4）
IPC小类 B32B（4）
IPC C01B031/02（4） C30B029/02（4） B32B009/04（3）
B82Y040/00（3） C01B031/04（3） B05D005/12（2）
B82Y030/00（2） C23C016/26（2） C23C016/56（2）
C30B029/36（2） C30B033/00（2） H01L021/02（2）
H01L021/20（2）
发明人
公开年 2011（2）
申请年 2009（4）
专利权人

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Manufacture of graphene/silicon carbide composite material for electronic component e.g. semiconductor, involves removing oxide film from surface of silicon carbide single crystal substrate, exposing and heating.

KUSUNOKI M, NORIMATSU W

Graphene or graphite thin film used for diaphragm structure, is formed on cubic crystal silicon carbide crystal thin film using cubic silicon carbide crystal thin film having specific orientation formed on silicon substrate.

SUEMITSU M, KONNO A, MIYAMOTO Y, MAKI S, ASSEUSI G, YU M