国家/地区 美国（4） 韩国（3）
IPC部 B（4）
IPC大类 B82（4）
IPC小类 B82B（4）
IPC B82Y030/00（4）
发明人 CHOI J（2） CHOI J Y（2） SHIN H（2）
SHIN H J（2）
公开年 2011（4）
申请年 2011（4）
专利权人 SAMSUNG ELEC.（3） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Graphene composition, useful in electrical device, preferably e.g. sensor, bipolar junction transistor, field effect transistor and light emitting diode, comprises a graphene monolayer and an alkali metal disposed on the graphene monolayer.

SHIN H, CHOI J, AHN J, JEON C, AHN J R, CHOI J Y, JEON C H, SHIN H J

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Graphene nanomesh for forming transistor, sensor, and graphene structure, comprises sheet of graphene having periodically arranged apertures, where the apertures have a substantially uniform periodicity and substantially uniform neck width.

DUAN X, HUANG Y, BAI J