国家/地区 美国（4） 世界知识产权组织（3） 中国（2） 日本（2）
IPC部 B（4）
IPC大类 B05（4）
IPC小类 B05D（4）
IPC C01B031/04（4） B05D005/00（2） B05D005/12（2）
B32B003/10（2） B82Y030/00（2） C01B031/02（2）
H01B001/04（2） H01L021/28（2） H01L029/16（2）
发明人 ANDERSON K（2） SJONG A（2）
公开年 2015（2）
申请年 2013（2） 
专利权人 EMPIRE TECHNOLOGY DEV LLC（4）

Etching method of graphene, involves etching exposed portions of graphene to form etched graphene structure, after applying resist to surface of graphene opposite to patterned substrate.

ANDERSON K, SJONG A

Graphene composite for use in device i.e. sensor for sensing analytes e.g. aromatic molecule in sample, comprises photoswitchable layer, graphene layer disposed on photoswitchable layer and substrate.

ANDERSON K, SJONG A, SOONG A, ANDERSON K K

Partially altering defect area in a layer on substrate involves reacting substrate under reaction conditions to produce cationic area in exposed areas; adhering graphene oxide to cationic area to produce graphene oxide layer; and reducing.

MILLER S, YAGER T, MILLER S A, YAGER T A

Graphene structure for electronic device elements, contains graphene fixed to substrate in which bonding is formed between portion to which hydrophilic process is performed, or portion to which hydrophilic process is not performed.

SANDHU A