国家/地区 中国（4） 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 B（4）
IPC大类 B82（4）
IPC小类 B82Y（4）
IPC B82Y030/00（4）
发明人 JIN C（4）
公开年
申请年 2014（2） 
专利权人 UNIV KYUNGHE.（2） UNIV KYUNGHE.（2）

Preparing nano lithium titanate-graphene porous composite electrode material, comprises preparing graphite oxide dry powder by Hummers method, ball milling dry powder, sintering and cooling naturally to room temperature.

XIANG Y, ZHAO P, CAO G, ZHANG W, ZHANG H, JIN C, QIU J, MING H

Tunneling diode used for diode-based optoelectronic device, consists of silicon quantum dot layer formed on silicon oxide thin film, doped layer having structure having graphene-silicon quantum dot hybrid structure, and electrode.

CHOI S H, SHIN D H, KIM S, SUK H C, DONG H S, SUNG K, CHIO S, SHIN D, JIN C

Photodiode useful in optoelectronic device, comprises e.g. a silicon quantum dot layer containing silicon quantum dots formed on silicon oxide thin film and a graphene-silicon quantum dot hybrid structure formed on silicon quantum dot layer.

SUK H C, DONG H S, SUNG K, CHOI S H, SHIN D H, KIM S, CHIO S, SHIN D, JIN C, DONGHEE S, SHIGAO C, SUNGKIM

Preparation of graphene nanoribbon with visible light response by ultrasonically dispersing graphene oxide into ultrapurified water, evaporating to dryness, performing vacuum reduction, and ultrasonically dispersing in ultrapurified water.

HE D, ZHANG J, XING M, JIN C, LIU R, YANG X