国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/186（2）
发明人 YU C（3）
公开年 2021（2）
申请年 2020（3）
专利权人 13TH RES INS.（2）

Preparing large-size two-dimensional material heterostructures comprises depositing atomic layer and growth on an aluminum oxide film, using second metal substrate, spin-coating photoresist, stripping, and drying.

GAO X, FENG Z, YU C, HE Z, LIU Q, GUO J, ZHOU C

Preparing large-size clean graphene material used for optoelectronics, by growing graphene layer on surface of metal substrate, forming metal layer on graphene layer, forming photoresist layer, and adhering glue-containing soft film.

GAO X, FENG Z, YU C, HE Z, LIU Q, GUO J, ZHOU C

Preparing silicon carbide-based twisted multilayer graphene material involves growing graphene materials on silicon carbide substrates, taking hydrogen as carrier gas and introducing gaseous carbon source to grow.

LIU Q, YU C, HE Z, GAO X, GUO J, ZHOU C, FENG Z