国家/地区 美国（6） 韩国（5） 中国（4） 世界知识产权组织（4） 欧洲专利局（EPO）（3） 加拿大（2） 日本（2）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/02（5） C01B031/04（5） B82Y030/00（4）
B82Y040/00（3） G06F003/041（2） G06F003/044（2）
G06F003/045（2） H01B005/14（2） H01B013/00（2）
H01L021/02（2） H01L029/16（2） H01L043/08（2）
H01L043/10（2）
发明人
公开年 2012（7）
申请年 2012（7）
专利权人 SAMSUNG ELEC.（2）

Preparation of copper phthalocyanine functional graphene for preparing graphene assembly film, by ultrasonic dispersing graphite and copper phthalocyanine tetrasulfonic acid tetrasodium salt, centrifuging, filtering, washing, and drying.

SHEN X, ZHANG Y, FAN Y

Method for forming one-to-four-monolayer graphene layer on metal layer in manufacturing, e.g., magnetic tunnel junction (MTJ) spin filters for magnetoresistive RAM, by inducing segregation of carbon in metal layer to surface of metal layer.

KELBER J, ZHOU M, MI J U

Ferromagnetic graphene for spin valve device, comprises ferromagnetic graphene having ferromagnetic characteristics and antidote(s) in ferromagnetic graphene.

LEE S, LEE S H

Material useful for preparing chromatography column for isolating protein from sample, and for preparing graphene oxide, comprises a graphene derivative comprising a graphene core and a first pendant group.

CHHOWALLA M, VITTADELLO M, WORONOWICZ K, FALKOWSKI P G, HARROLD J W, HARROLD J

Transfer sheet used for e.g. capacitance-type touch input device, has base sheet, thin metal film layer, and transparent conductive film layer containing graphene as main component, formed sequentially.

MORI F, TERAZONO H, TERAZONO S

Transparent conductive film used as electrode in e.g. heater, has electroconductive graphene sheet with secondary region whose light transmittance capacity is higher than primary region.

SHIMIZU K, KOBAYASHI T, KIMURA N, IZUHA K, DEWA K

Three-dimensional graphene structure useful as next-generation material for electronic device e.g. display device and transparent electrode for solar cell comprises a layer of graphene having periodically repeated three-dimensional shape.

SHIN H, CHOI J, PARK J, AHN J, AHN J R, CHOI J Y, PARK J H, SHIN H J