国家/地区 欧洲专利局（EPO）（4）
IPC部 B（4）
IPC大类 B82（4）
IPC小类 B82Y（4） C01B（4） H01L（3）
B01J（2） C23C（2）
IPC B82Y030/00（4）
发明人 ZENASNI A（2）
公开年 2013（2）
申请年 2011（2） 
专利权人 CENT NAT REC.（2） COMMISSARIAT.（2）

Process for reduction of component for producing product e.g. film, involves introducing mixture comprising polymer and graphene oxide into reactor and subjecting to preset temperature and pressure, and removing obtained product.

POULIN P, PADMAJAN S S, AYMONIER C, PADMAJAN SASIKALA S

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Process for elaboration of graphene, useful e.g. in nanoelectronics, comprises depositing layer comprising amorphous carbon on substrate and annealing layer by photonic- and/or electronic-irradiation to obtain layer comprising graphene.

ZENASNI A, AJIJEU J