国家/地区 中国（3） 美国（3） 欧洲专利局（EPO）（2） 世界知识产权组织（2）
IPC部 B（3）
IPC大类 C01（3）
IPC小类 C01B（3） C03C（3） B32B（2）
IPC C01B032/186（3）
发明人
公开年 2017（3）
申请年 2016（2） 
专利权人

Electrical conductor for use in electronic devices, has first conductive layer that includes graphene which is p-doped with p-type dopant, formed in first surface facing second conductive layer and second surface.

SOHN H, SHIN W, WOO Y S, SUN X, XIN Y, YEO R, SOHN H S

Manufacturing method for nano structure antireflection film, involves forming antireflection film using graphene as growth substrate, after forming hexagonal graphene honeycomb lattice on silicon dioxide layer.

ZHA G

Method for transferring graphene film to substrate, involves contacting exposed graphene surface with target substrate formed by removing growth substrate that is contacted by second surface of graphene film.

JOHNSON B Y, LIU X, MAZUMDER P