国家/地区 日本（3） 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 C（3）
IPC大类 C07（3）
IPC小类 C07B（3） C07C（3） H01L（3）
C01B（2）
IPC C07B061/00（3）
发明人
公开年 2014（2）
申请年 2013（2） 
专利权人

Organic-semiconductor film used for channel in transistor structure, has pseudo graphene structure including two-dimensional network structure which is formed continuously.

KAGAYA M, MATSUMOTO T, KATO D, KATO T

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

Electroconductive variable triple layer carbon nanotube used as transistor material, has cylindrical graphene sheets having functional group in surface.

ANDO T, NAKAGAWA K, GAMO M, SATO Y, CHIKU Y, TAKAZAWA Y