国家/地区 日本（4） 美国（3） 欧洲专利局（EPO）（2）
IPC部 B（4） C（4） H（2）
IPC大类 B82（4）
IPC小类 B82Y（4）
IPC B82Y040/00（4）
发明人 OHTOMO M（2） OTOMO M（2） YAMAGUCHI J（2）
公开年 2018（2）
申请年 2018（2） 
专利权人 FUJITSU LTD（4）

Production of graphene nanoribbons used in semiconductor device e.g. field effect transistor for electronic devices, involves synthesizing polyaromatic-based polymer by eliminating specific group from polymer, and bonding carbon atoms of aromatic ring from which specific group is eliminated.

YAMAGUCHI J

Graphene nanoribbon precursor for use in graphene nanoribbon that is utilized in electronic device for channel of FET and resonant tunneling diode, comprises substituted terphenyl compound.

YAMAGUCHI J

New 2,6-di(1,1'-binaphthyl-2-yl)biphenyl derivatives useful as a precursor of a graphene nanoribbon.

OHTOMO M, OTOMO M

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M