国家/地区 韩国（3） 美国（2）
IPC部 C（3） H（2）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C23C016/44（2） C23C016/455（2）
发明人 CHO B J（2） MUN J H（2）
公开年 2014（3）
申请年 2013（3） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（3）

Chemical vapor deposition (CVD) auxiliary device for use in production of high quality and large sized graphene, has metallic foil that is deposited on substrate placed above sealing element provided between cover plates.

AHN C W, KANG I S, SHIN Y H, YOO K

Graphene layer formation method involves subjecting board comprising of stack of layers to high pressure annealing in vacuum atmosphere or inert gas atmosphere.

CHO B J, MUN J H

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H