国家/地区 韩国（3） 美国（2）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C23C016/02（3）
发明人 PARK J（2） PARKJAEHYUN（2）
公开年
申请年
专利权人 KOREA INST SCI TECHNOLOGY（3）

Masking block used e.g. to form pattern comprises base substrate, gamma-alumina thin film disposed on base substrate, and hexagonal boron nitride thin film doped with carbon and oxygen and disposed on gamma-alumina thin film.

LEE D, PARK J, PARKJAEHYUN, LEE D J

Synthesizing graphene pattern by physically adhering catalyst block including catalyst material to portion of growth substrate, and forming graphene thin film selectively at interface between catalyst block and growth substrate.

PARK J, SIM Y, KIM J, SIM Y M, PARKJAEHYUN

Manufacture of graphene barrier film for e.g. electronic device, involves forming graphene precursor layer on catalyst layer, forming graphene layer and protective layer, removing catalyst layer and providing graphene layer to substrate.

KIM M J, SEO T H, LEE S, KIM S M, AHN S, BAE S, SON D I