国家/地区 韩国（3） 美国（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3） H01L（3） C01B（2）
IPC C23C016/26（3）
发明人 JUNG A（3）
公开年 2020（2）
申请年
专利权人 SAMSUNG ELEC.（3）

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Pre-treatment of substrate e.g. non-metal substrate such as semiconductor substrate or dielectric substrate used for forming graphene directly, involves using pre-treatment gas including carbon source and hydrogen.

SHIN K, LEE J, NAM S, SHIN H, LIM H, JUNG A, BYUN K, CHO Y, SHIN K W, LEE J H, NAM S G, SHIN H J, LIM H S, JUNG A R, BYUN K E, LEE J I, CHO Y C

Formation of nanocrystalline graphene used for semiconductor device, involves arranging substrate in chamber, forming protective layer, injecting reaction gas, generating plasma, and growing nanocrystalline graphene on protective layer.

JUNG A, SHIN K, BYUN K, SHIN H, LIM H, NAM S, SONG H, CHO Y, JUNG A R, SHIN K W, BYUN K E, SHIN H J, LIM H S, NAM S G, SONG H J, CHO Y C