国家/地区 韩国（5） 日本（3） 美国（3） 中国（2） 欧洲专利局（EPO）（2）
IPC部 B（5）
IPC大类 B01（5）
IPC小类 B01J（5）
IPC C01B031/02（5）
发明人
公开年 2011（2） 2012（2）
申请年 2010（5）
专利权人

Manufacturing method of graphene, involves growing graphene on surfaces of floating sample in air.

JOO I L, CHAN Y H, KWONJAE Y, JUNG H K, YONG S Y, YONG H S, GEUN W L

Method for improving graphene property involves irradiating laser beam on graphene grown on substrate, and heat treating.

LEE K J, CHOI I S, CHOI S Y, HONG B H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Producing graphene, comprises introducing a solution of a metal alkoxide in a solvent into a decomposition apparatus, which includes a first region having a high temperature to cause thermal decomposition of the metal alkoxide.

COLEMAN K S

Process for elaboration of graphene, useful e.g. in nanoelectronics, comprises depositing layer comprising amorphous carbon on substrate and annealing layer by photonic- and/or electronic-irradiation to obtain layer comprising graphene.

ZENASNI A, AJIJEU J