国家/地区 世界知识产权组织（6）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（6） H01L（5） C01B（4）
B82Y（2）
IPC C23C016/448（6）
发明人
公开年
申请年 2022（2） 
专利权人

Plasma deposition of material onto two dimensional layer of first substrate, involves depositing protective layer directly onto dimensional layer by pulsed plasma deposition process, and depositing second layer onto protective layer by second plasma deposition process.

RIAZIMEHR S, KNOOPS H, SUNDARAM R

Acetylene fluid supply package for use in fabricating a semiconductor device, has pressure vessel, porous filler in the pressure vessel, improved solvent within the porous filler, where solvent solubilizing with acetylene absorbed within the improved solvent, improved solvent is triethyl phosphate.

HAN Y, CHUNG W, CHO Y, KANE W S, SONG X, SINHA A K, CHO Y J

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Preparing deposited graphene used as genosensor, comprises heating metal substrate and carbon source in sealed ambient environment, maintaining temperature and time sufficient to form graphene lattice and then cooling substrate.

SEO D H, PINEDA S, HAN Z J, OSTRIKOV K

Coating surfaces of different substrates with covalently-bonded graphenes comprises thermal expansion and floating of graphene, graphene oxide or graphite materials in the presence of silicon- or cyano-containing polymers.

LEE L J, HUANG W, YU J, LEE L

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K