国家/地区 中国（2） 日本（2） 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C23C016/455（3）
发明人
公开年 2021（2）
申请年 2020（3）
专利权人

Semiconductor component useful in plasma reaction device and plasma etching process of process gas e.g. carbon tetrafluoride and oxygen, comprises conductive heat conducting material filled in pores of first corrosion resistant coating.

NI T, CHEN X, ZHU S

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Processing device for forming film, consists of processing container having thermal sprayed ceramic coating on inner wall, mounting table for holding substrate and control unit for performing precoating and film forming.

WADA M, MATSUMOTO T, SUGIURA M, IFUKU R, UEDA H, KURYOTA L