国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3） C01B（2） H01B（2）
IPC C23C016/511（3）
发明人
公开年 2016（2）
申请年 2016（3）
专利权人

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Preparation of nano silver-containing fluorinated graphene composite material involves transferring formed fluorinated graphene film to deposition chamber, introducing silver reaction gas source, and growing nano silver on graphene film.

WANG Z

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H