国家/地区 美国（4） 韩国（3） 中国（2） 欧洲专利局（EPO）（2） 日本（2）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 B32B（4） C23C（4） C01B（3）
B82Y（2） C30B（2） H01L（2）
IPC C23C016/26（4） B32B009/00（2） B82Y030/00（2）
C01B031/02（2） C01B031/04（2） C23C016/02（2）
C23C016/56（2）
发明人
公开年 2009（2） 2010（2）
申请年 2008（5）
专利权人

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C

Sidewall graphene device fabricating process, involves forming protruding or mesa structure with sidewall surface, and forming device structure in contact with material layer in fin FET configuration.

CHEN A, KRIVOKAPIC Z

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z

Graphene hybrid material used in biosensor, comprises matrix having lattice planes disconnected on surface and graphene layers which are epitaxially grown along lattice planes such that graphene layers are oriented to matrix.

JOHN P, LEE J K, LEE S C, LEE W S, KAP L, KAP L J

Graphene preparation comprises using chemical vapor deposition including placing substrate with catalyst into free-oxygen reactor, increasing substrate temperature, and adding carbonaceous substance to reactor.

LIU Y, WEI D, DI Z, WANG Y, ZHANG H, HUANG L, YU G