国家/地区 中国（5）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5） F22B（2） F28F（2）
IPC C23C016/26（5）
发明人 LIU L（5）
公开年 2014（2）
申请年 2014（3） 
专利权人 UNIV NORTH C.（2）

Method for preparing hole transport layer useful in crystal silicon solar cell involves etching Nafion film on surface of graphene mixed film using plasma enhanced chemical vapor deposition and plasma technology, and exposing graphene film.

YU W, LIU L, HUANG Y, JIA L, SHI X, LIU X, LU W, CONG R

U-shaped tube with graphene layer, has tube wall having graphene layer with specific outer diameter, and wall thickness and thickness of graphene layer and tube main portion has side open end to establish annular resistance element.

LIU L, SONG M, ZHOU T

Copper-based contact material used in low-voltage circuit breaker, contactor and relay, comprises graphene-enhanced copper foam including graphene and copper, where copper foam comprises oxide powder, carbide powder and copper powder.

LIN W, LIU L, WENG W

U-shaped graphene layer tube, has U-shaped tube body fixed with power station steam generator and provide with graphite alkene layer, and laminated bag connected with outer wall layer, where outer wall layer is formed by Inconel material.

LIU L, SONG M, ZHOU T

Preparing graphene thin layer on the surface of metal catalyst involves reacting carbon source and metal catalyst substrate in presence of hydrogen and argon so as to perform carburization reaction.

GAO S, GENG X, GONG Y, LIU L, LONG M, ZHANG X, ZHU C