国家/地区 韩国（4） 美国（4）
IPC部 B（4）
IPC大类 B32（4）
IPC小类 B32B（4）
IPC B32B009/00（4）
发明人 SHIN H（4）
公开年
申请年
专利权人 SAMSUNG ELEC.（4） UNIV SUNGKYU.（2）

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Graphene laminate, useful e.g. in transparent electrode, super-capacitor, fuel cell and solar cell, comprises substrate, binder layer on substrate, and graphene on binder layer, where the graphene is bound to substrate by binder layer.

SHIN H, CHOI J, HAN G, LEE Y, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z