国家/地区 中国（4） 美国（3） 世界知识产权组织（3）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（6）
IPC C23C016/26（3） C30B029/02（3） B82Y040/00（2）
C01B031/02（2） C01B031/04（2） C23C016/02（2）
C23C016/458（2） C30B025/12（2）
发明人 JIN H（2） PENG P（2）
公开年 2012（6）
申请年 2011（6）
专利权人 PENG P（2）

Graphene thin film for bracket, has winding structure that is provided with inner surface, opposite outer surface, inner and outer edges.

JIN H, PENG P

Bracket for growing graphene, has inner edge and outer edge which are wound more than circle to form structure more than one layer.

JIN H, PENG P

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Method for epitaxially growing graphene on silicon carbide wafer involves processing silicon carbide wafer with hydrogen and silane to remove oxide produced on wafer surface, and supplying argon.

LEI T, WANG D, TANG X, LEI J, WANG Y, ZHANG Y, WANG H

Producing an array of single-crystal graphene islands, to make e.g. transistor, comprises e.g. providing substrate, cleaning substrate surface, spin-coating poly(methyl methacrylate) layer on the surface, curing, and performing lithography.

YU Q, PEI S

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X