国家/地区 美国（3） 世界知识产权组织（2）
IPC部 B（3）
IPC大类 B32（3）
IPC小类 B32B（3）
IPC B44C001/22（2） C01B031/02（2） C03C025/68（2）
C23C016/26（2） H01L021/205（2）
发明人
公开年 2009（3）
申请年 2009（3）
专利权人

Suspending graphene membrane across gap in support structure, comprises attaching graphene to substrate, attaching pre-fabricated support structure having the gap to graphene, and separating graphene and structure from substrate.

MEYER J C, ZETTL A K

Forming a single or few layer graphene film, useful as e.g. transistor device, comprises forming graphene film on substrate, coating film with protective support layer and etching surface of substrate to release film and protective layer.

CECCO A, DRESSELHAUS M, KONG J, CECCO A R, DRESSELHAUS M S

Graphene or graphite thin film used for diaphragm structure, is formed on cubic crystal silicon carbide crystal thin film using cubic silicon carbide crystal thin film having specific orientation formed on silicon substrate.

SUEMITSU M, KONNO A, MIYAMOTO Y, MAKI S, ASSEUSI G, YU M