国家/地区 美国（5）
IPC部 B（5）
IPC大类 B32（5）
IPC小类 B32B（5）
IPC C01B031/02（5） C01B031/04（4） B82Y040/00（3）
C23C016/26（3） H01L021/02（3） B05D005/12（2）
B32B009/00（2） B82Y030/00（2） C23C016/56（2）
C30B029/02（2） H01L021/20（2） H01L021/205（2）
发明人
公开年 2009（2） 2010（2）
申请年 2009（5）
专利权人

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Electronic device comprises porous graphene layer including graphene nanoribbon and electrically connecting two graphene electrodes.

KAERKKAEINEN A M, HAQUE S M, COLLI A, PASANEN P M, JOHANNES K L M, UUSITALO M A, LEHTINIEMI R K, KARKKAAINEN A M, HAQUE S, KARKKAINEN L M J, KARKKAINEN L, UUSITALO M, LEHTINIEMI R, KARKKAINEN L M Y, KAERKKAEINEN L M J

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J

Forming a single or few layer graphene film, useful as e.g. transistor device, comprises forming graphene film on substrate, coating film with protective support layer and etching surface of substrate to release film and protective layer.

CECCO A, DRESSELHAUS M, KONG J, CECCO A R, DRESSELHAUS M S

Graphene or graphite thin film used for diaphragm structure, is formed on cubic crystal silicon carbide crystal thin film using cubic silicon carbide crystal thin film having specific orientation formed on silicon substrate.

SUEMITSU M, KONNO A, MIYAMOTO Y, MAKI S, ASSEUSI G, YU M