国家/地区 美国（7） 世界知识产权组织（6） 中国（3）
IPC部 C（7） B（5） H（5）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/04（5） B82Y040/00（4） C01B031/02（4）
C23C016/26（4） B82Y030/00（3） C23C016/52（2）
C23C016/56（2）
发明人 YAGER T A（3） MILLER S A（2）
公开年 2012（3） 2013（2）
申请年 2011（3） 
专利权人 EMPIRE TECHNOLOGY DEV LLC（7）

Copper substrate for growing graphene monolayer has second copper layer in contact with first copper layer, and has second copper percentage, second oxygen percentage and second average thickness.

YAGER T A, ROBINSON J

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

Membrane used to separate gas from fluid mixture including first gas e.g. neon and second gas, includes graphene layer perforated by nanoscale pores, and gas sorbent to contact surface of layer and direct gas adsorbed at sorbent into pores.

DUERKSEN G L, MILLER S A

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A