国家/地区 中国（4） 美国（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 WANG C（4）
公开年 2012（2） 2015（2）
申请年
专利权人

Preparation of graphene film on titanium or titanium alloy surface used as implant material, involves growing graphene film on metal base material, covering with plastic film, placing in dissolution medium, and attaching to titanium.

BI L, HAN Y, LI K, WANG C, ZHANG Z, YAN J, DIWU W

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Reduction-oxidation graphene film formation on titanium alloy sheet surface includes immersing graphene oxide powder into rare earth modifier, filtering, and drying to obtain solid graphene oxide.

CHENG H, LI P, CHENG X, SHU D, WANG C

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X