国家/地区 韩国（3） 美国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC H01L021/02（3）
发明人
公开年
申请年 2018（3）
专利权人

Formation of nanocrystalline graphene used for semiconductor device, involves arranging substrate in chamber, forming protective layer, injecting reaction gas, generating plasma, and growing nanocrystalline graphene on protective layer.

JUNG A, SHIN K, BYUN K, SHIN H, LIM H, NAM S, SONG H, CHO Y, JUNG A R, SHIN K W, BYUN K E, SHIN H J, LIM H S, NAM S G, SONG H J, CHO Y C

Method for directly synthesizing graphene on surface of target object, involves forming non-metal layer on support substrate, disposing target object in space above support substrate, and injecting carbon precursor to form graphene.

SONG Y, UDDIN M S, PARK J, PARKJAEHYUN

Method for doping synthesized graphene by high temperature heat treatment in gas atmosphere containing dopant,.

HAM M H, SON M W, MYUNGWOO S