国家/地区 美国（4） 韩国（2） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/02（4）
发明人
公开年 2014（4）
申请年 2013（3） 
专利权人 SAMSUNG ELEC.（2）

Method for forming graphite-based structure used for e.g. electronic devices, involves patterning substrate, forming elements on substrate, depositing graphene initiating layer on top surface of each element, and generating graphene.

DAVIS M A

Making graphene structure involves depositing metal layer over silicon carbide substrate, and performing first heat treatment on substrate over which metal layer is deposited to form composite layer and electrically neutral graphene layer.

AHN J, SHIN H, SONG I, AHN J R, SHIN H C, SONG I K

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S