国家/地区 美国（5） 中国（3） 日本（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2） 韩国（2）
IPC部 B（5）
IPC大类 B32（5）
IPC小类 B32B（5）
IPC B32B009/00（5）
发明人
公开年 2015（5）
申请年 2014（2）  2015（2） 
专利权人

Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Composition, used in a phase change material which is useful e.g. as thermal conductivity substrate for flexible graphene electronic devices, as electrode in battery, and in a thermal storage device, comprises galactitol and mannitol.

DA SILVA A K, FLEMING E, SHI L, BIELAWSKI C W, RUOFF R S, WEN S, JI H, PETTES M, PAUL A, PAEK E, PAK A J, SELLAN D P, FLAMING E, DA SILVAA A K