国家/地区 美国（4） 世界知识产权组织（4） 中国（3） 日本（3） 韩国（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C30B029/02（6）
发明人
公开年 2012（3） 2014（2）
申请年 2012（6）
专利权人

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Production of graphene involves supplying carbon to heated transition metal surface, and forming graphene on buffer thin-film epitaxially grown on nickel substrate.

FUJII T, SATO M

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Three-dimensional graphene tube for use in e.g. solar cell, has diameter and length, in preset range, and has preset number of layers.

BI H, HUANG F, LIN T