国家/地区 美国（4） 中国（3） 世界知识产权组织（3） 印度（2） 韩国（2）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5）
IPC C23C016/34（2） C30B025/18（2） C30B029/02（2）
C30B029/38（2） H01L021/02（2）
发明人
公开年 2021（4）
申请年 2020（5）
专利权人

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B

Two dimensional (2D) hetero structure used in article of manufacture, comprises graphene deposited on substrate and borophene coupled with graphene on substrate to form 2D borophene- graphene hetero structure.

HERSAM M C, LIU X

Ferromagnetic/graphene/ferromagnetic heteroepitaxial film has graphene layer that is directly epitaxially grown on first heteroferromagnetic layer, and second heteroferromagnetic layer is epitaxially grown on graphene layer.

PAN M, PENG J, HU Y, LI P, QIU W, HU J, CHEN D