国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C23C016/04（3）
发明人 NARKEVICIUTE I（2） VARADARAJAN B N（2）
公开年 2021（3）
申请年 2021（2） 
专利权人 LAM RES CORP（2）

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I