国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3） C30B（3）
IPC C23C016/26（3）
发明人 LEI T（3） ZHANG Y（3） DENG P（2）
GUO H（2） ZHANG K（2）
公开年 2012（3）
申请年 2012（2） 
专利权人 UNIV XIDIAN（3）

Formation of graphene on 3C-silicon carbide substrate involves carbonizing silicon substrate, forming carbon film, carrying out heteroepitaxial film growth, reducing, reacting with carbon tetrachloride, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Method for epitaxially growing graphene on silicon carbide wafer involves processing silicon carbide wafer with hydrogen and silane to remove oxide produced on wafer surface, and supplying argon.

LEI T, WANG D, TANG X, LEI J, WANG Y, ZHANG Y, WANG H