国家/地区 中国（4） 美国（4） 欧洲专利局（EPO）（3） 日本（3） 世界知识产权组织（3） 韩国（2）
IPC部 C（5） B（4） H（3）
IPC大类 C01（5）
IPC小类 C01B（5） C30B（5） B82Y（3）
H01L（3） C04B（2） C23C（2）
IPC C01B021/064（5）
发明人
公开年
申请年
专利权人

Method for preparing micro-nano materials comprise e.g. introducing sacrificial carrier into slurry containing raw materials and auxiliary agents, shaping and drying to form mixture, synthesizing preform to prepare porous body made of micro-nano materials, and performing dispersion operation.

LI Q

Sp2-sp3 hybrid crystalline boron nitride has basic structural unit composed of sp2 hybridized graphite-like structural unit and sp3 hybridized diamond-like structural unit, where the two types of units are connected via coherent interface.

ZHAO Z, LUO K, SUN L, LIU B, HU W, HE J, YU D, TIAN Y, XU B, LIU Z, ZHAO Z S, HU W T, HE J L, YU D L, TIAN Y J, LIU Z Y

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X

Electronic device for field effect transistor, comprises body including single crystal region that has hexagonal crystal lattice substantially lattice-matched to graphene, and epitaxial layer of graphene disposed on the region.

PFEIFFER L N, PFEIFFER L