国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3） C04B（2）
IPC C30B035/00（3）
发明人
公开年 2021（3）
申请年 2020（2） 
专利权人

Preparation of graphite thermal field material surface-coated with tantalum carbide coating for high temperature third-generation semiconductor crystal growth furnace, involves high-pressure water treating graphite surface, plasma spraying tantalum powder, infiltrating graphite, and carbonizing.

TANG B, WU X

Graphene-reinforced silicon carbide heating rod comprises silicon carbide, graphene oxide boron, boron carbide, surfactant and binder in cold area and silicon carbide, boron carbide, surfactant and binder in hot zone.

SHEN L, DAI P, JI C, WANG Y

Graphite heating device for monocrystalline silicon production, includes universal wheels are fixed at the corners of the bottom of the base, and supporting feet are fixed at the bottom of the base on one side of the universal wheel.

SONG S, GAO Y, ZHANG P, QI Y, HE X, YANG Y