国家/地区 法国（3）
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82Y（3）
IPC B82Y040/00（3）
发明人 OUERGHI A（2）
公开年 2013（2）
申请年 2011（2） 
专利权人 CENT NAT REC.（2）

Forming graphene layer on surface of substrate, comprises gradually heating substrate until sublimation of silicon of first row of atoms of free surface of silicon-carbide film, where free surface of silicon layer is stepped.

OUERGHI A

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T