国家/地区 美国（4）
IPC部 B（4）
IPC大类 B82（4）
IPC小类 B82Y（4）
IPC B82Y030/00（4） B82Y040/00（4） C01B031/04（4）
C30B029/02（4） C01B031/02（3） H01B001/04（3）
B82B003/00（2） C01B032/188（2） C30B031/02（2）
C30B031/04（2） C30B031/22（2）
发明人 VEERASAMY V S（4）
公开年 2011（3）
申请年 2009（2） 
专利权人 GUARDIAN IND.（4） GUARDIAN GLA.（3） GUARDIAN IND（3）

Doped high electronic grade graphene thin film for solid-state solar cells, has n-type/p-type dopants made of nitrogen, boron and phosphorus, where film is grown directly or indirectly on metal catalyst thin film with crystal structure.

VEERASAMY V S

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V