国家/地区 世界知识产权组织（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC
发明人
公开年 2022（2）
申请年 2021（4）
专利权人

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Forming dry electrode for measuring electrophysiological readings, by growing silicon carbide film on silicon substrate, depositing metals on surface of silicon carbide film, heating to react metal with silicon of silicon carbide film to form carbon and silicide and carbon forms graphene layer.

IZZO K A, AMJADI POUR M, FAISAL S N, LIN C, IACOPI F

Manufacture of expanded graphite for forming exfoliated graphene oxide, involves adding iron(III) salt to mixture containing potassium manganese oxide, graphite and sulfuric acid/phosphoric acid to form solid graphite-intercalated compound, separating obtained compound and heating.

CHEN A, SALVERDA M, THIRUPPATHI A R, SIDHUREDDY B, RAHMATI F

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S