国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C23C016/26（2） C30B025/18（2） C30B029/02（2）
发明人 ZHANG Y（3）
公开年 2017（3）
申请年 2017（2） 
专利权人

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Heteroepitaxial diamond comprises heterogeneous substrate, graphene flexible layer used as flexible intermediate layer for growing diamonds on heterogeneous substrate, and diamond layer which is epitaxially grown on diamond layer.

YU W, JIN P, ZHANG Y, WANG Z

High temperature process chamber vertical arrangement of graphene continuous growth apparatus, has second high temperature process chamber and receiving cooling chamber guide roll received on graphene substrate receiving roll.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y