国家/地区 韩国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/184（3） G03F001/62（3） C01B032/194（2）
G03F001/22（2）
发明人 KIM H（3）
公开年 2022（2）
申请年
专利权人 KOREA ELECTR.（3）

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Manufacturing graphene-metal composite pellicle containing graphene by forming metal catalyst layer on silicon substrate, forming core layer by growing graphene, forming protective layer, forming heat dissipation layer and forming pellicle frame composed of silicon substrate-metal catalyst layer.

KIM H, LEE G, KIMHYUNGKEUN