国家/地区 韩国（3） 美国（2）
IPC部 B（3）
IPC大类 B01（3） C01（3） G03（2）
H01（2）
IPC小类 B01J（3）
IPC C01B032/184（3）
发明人 KIM H（3）
公开年 2022（2）
申请年
专利权人 KOREA ELECTR.（2）

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Method for forming multilayer graphene for e.g. stackable device, involves forming multilayer graphene on area of graphene at temperature by using source gas, where source gas used to form graphene is different from source gas.

HYOWON K, KIM H, KIM H W, JIN X