国家/地区 日本（7）
IPC部 B（7）
IPC大类 B01（7） C01（4） H01（3）
C08（2）
IPC小类 B01J（7）
IPC B01J019/00（7）
发明人 KWON W（2） KWON W J（2）
公开年
申请年
专利权人 LG CHEM LTD（2）

Heat regulation apparatus used for cosmetics e.g. beauty mask, has heat transfer plate that is placed on cooling pad or heating pad so as to be in contact with or adjacent to cooling pad.

CHEN X L, ZHANG X, CHEN X

Formation of composite used in carbon electrode of lithium sulfur battery, involves subjecting carbon/sulfur mixture to microwave heat source, raising temperature of mixture, and lowering temperature of to less than melting point of sulfur.

TORRES G, ZHU X, VAIDYA R, MOGANTY S, MORGANTY S, ZHOU X

High pressure homogenization apparatus for manufacturing graphene, has channel module including baffle to partition micro-channel into multiple spaces along width direction or height direction.

KIM E J, YOO K H, IM Y H, LEE J Y, KWON W J, KIM E, YOO K, IM Y, LEE J, KWON W

Block copolymer used for manufacturing graphene for forming sheet used for electrical component and structural component, comprises substituted hydrocarbon repeating unit and ethylene repeating unit.

LEE M J, SOHN B, CHAE S Y, KWON W J, SOHN K N, SOHN B H, CHAE S, LI M, KWON W, SOHN K

System for cooling, has micro channel comprising base with aluminum sheet metal, anodized aluminum, Teflon-coated aluminum, copper sheet metal, graphene and pyrolytic graphite, and side with copper foil, graphene and pyrolytic graphite.

DAVIS S

Reducing the amount of a species in a vapor phase sample comprises contacting a vapor phase sample containing a first concentration of the species with a composition comprising substituted graphene or graphene oxide molecules.

SWAGER T M, COLLINS W R, LEWANDOWSKI W, SCHMOIS E, SYDLIK S, WALISH J, GOODS J B, SWAGER T, COLLINS W, GOODS J

Formation of nano dots for forming charge trap layer used in fabrication method of memory device, involves forming cores, coating surfaces of cores with polymer, and thermally treating coated surfaces of cores to form graphene layer.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M