国家/地区 美国（4）
IPC部 B（4）
IPC大类 B01（4） C01（4） C23（4）
IPC小类 B01J（4）
IPC C01B031/04（4）
发明人
公开年 2014（3）
申请年 2013（4）
专利权人

Graphene synthesizer used for synthesizing graphene, comprises heater unit for applying heat to continuous catalytic metal thin film, susceptor unit arranged between catalytic metal thin film and heater, and source material supply unit.

YOON J, YOON J H

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Graphene manufacturing system, useful for growing graphene layers on insulated surface of work piece, comprises furnace body having working chamber, catalyst source, hydrogen source, and carbon feedstock source.

TENG P, CHIU P, LU C, TENG P Y, CHIU P W, LU C C

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A