国家/地区 中国（3） 韩国（2） 美国（2）
IPC部 B（5）
IPC大类 B01（5）
IPC小类 B01J（5）
IPC C23C014/58（5）
发明人 KIM T S（2） SEOK H H（2） WOO K H（2）
公开年 2021（3）
申请年 2021（2） 
专利权人 UNIV SUNGKYU.（2）

Preparing metal/graphene/single atom composite catalytic material involves reparing pure foam metal material, preparing graphene on the surface of pure foam metal material by chemical vapour deposition method, and vacuumizing.

CHENG H, ZHONG S, MO H, ZENG Y, WANG Z, WANG Y, LIU Y, HU M, WU H, CAO Y

Producing octahedral transition metal dichalcogenides involves forming transition metal layer on substrate and injecting chalcogenide-containing gas onto the substrate together with plasma treatment.

VINIT K, KIM H U, LEE J, SEOK H, KIM T, KIM T S, SEOK H H, WOO K H, CANADEVINIT

Manufacturing transition metal dichalcogenide-graphene heterojunction electrode comprises transferring graphene to electrode, depositing transition metal layer on graphene-transferred electrode and injecting plasma-treated sulfur gas.

KIM T S, SEOK H H, LEE I, WOO K H

Composite film comprises aluminum foil substrate, graphene coating, zinc oxide nano-wall array with honeycomb structure and rod shape and silver-plated layer that is prepared by spin-coating and annealing reduction.

CHEN D

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H