国家/地区 韩国（4）
IPC部 B（4）
IPC大类 B01（4）
IPC小类 B01J（4）
IPC C23C016/26（4） C01B031/02（3） B01J019/08（2）
C01B031/04（2）
发明人
公开年 2015（4）
申请年 2014（3） 
专利权人

Manufacturing graphene, comprises manufacturing superimposed body by overlapping the stacked thin film made of a metal catalyst layer; and preparing graphene on a metal catalyst layer by performing a chemical vapor deposition.

CHO K, BONG H

Production of doped graphene pattern during manufacture of pn-diode, involves supplying n-type carbon precursor on substrate, forming amorphous carbon pattern by irradiating electron beam or ion beam to precursor and heat-treating.

BAE D J, KIM K S, LEE I B

Manufacture of graphene involves irradiating near-infrared ray to chamber containing metallic catalyst and carbon source, reacting metallic catalyst and carbon source, and growing graphene on surface of metallic catalyst.

HONG B H, HAN J H, HAN D H, CHOI W T, KIM J D

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y