国家/地区 日本（3） 韩国（3） 美国（3） 中国（2） 欧洲专利局（EPO）（2）
IPC部 B（3）
IPC大类 B01（3）
IPC小类 B01J（3）
IPC B82Y030/00（3）
发明人
公开年 2011（2）
申请年 2010（3）
专利权人

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Producing graphene, comprises introducing a solution of a metal alkoxide in a solvent into a decomposition apparatus, which includes a first region having a high temperature to cause thermal decomposition of the metal alkoxide.

COLEMAN K S

Process for elaboration of graphene, useful e.g. in nanoelectronics, comprises depositing layer comprising amorphous carbon on substrate and annealing layer by photonic- and/or electronic-irradiation to obtain layer comprising graphene.

ZENASNI A, AJIJEU J