国家/地区 美国（8）
IPC部 B（8）
IPC大类 B05（8） C01（8） C23（7）
B82（6） H01（5） B32（2）
IPC小类 B05D（8）
IPC C01B032/186（8）
发明人
公开年 2013（2） 2016（2）
申请年 2013（3）  2015（2） 
专利权人

Two dimensional (2D) hetero structure used in article of manufacture, comprises graphene deposited on substrate and borophene coupled with graphene on substrate to form 2D borophene- graphene hetero structure.

HERSAM M C, LIU X

Method for preparing graphene conductive film for flexible touch device, involves growing graphene layer on metal-catalyzed base, and coating polyamic acid solution layer on graphene layer, where polyimide film is formed by thermal curing.

DI Y

Apparatus for manufacturing cell sheet, has graphene layer that is formed adjacently in electrode, and patterned electrode that is formed adjacently in support layer.

KIM D, CHOI S, HYEON T, KIM S, CHO H, CHO K, HONG C S, HWAN H T, HYEONG K D, JU K S, RIM C H, WON C G

Energy device used in supercapacitor application, comprises porous metal substrate, graphene layer deposited onto surface of porous metal substrate, carbon nanotubes, and metal oxide nanostructures.

WANG W, GUO S, OZKAN C S, OZKAN M

Formation of graphene for electronic device, involves forming graphene layer on catalytic metal layer, forming organic-inorganic hybrid film in uncured state on graphene layer, and curing.

MOON J, JUNG K, KANG E, KANG O, JEONG G, KANG E S

Method for manufacturing electrical conductor, involves depositing boundary cappings on defects of graphene layer to inhibit corrosion of the substrate layer at defects and depositing boundary capping material on substrate layer.

LIU Z, ZHENG M, MARTENS R I, MARTENS R

Fabricating graphene structures, comprises fabricating a crystalline graphene layer on a surface, and subsequently decreasing crystallographic disorder of crystallographically disordered edges by heating crystalline graphene layer.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M, UNG K M

Producing graphene, comprises introducing a solution of a metal alkoxide in a solvent into a decomposition apparatus, which includes a first region having a high temperature to cause thermal decomposition of the metal alkoxide.

COLEMAN K S