国家/地区 欧洲专利局（EPO）（3）
IPC部 B（3）
IPC大类 B05（3）
IPC小类 B05D（3）
IPC C01B031/02（3） B05D003/02（2） B05D003/06（2）
C01B031/04（2） C23C016/26（2） C23C016/56（2）
发明人
公开年 2010（3）
申请年 2010（2） 
专利权人

Manufacture of graphene film used for manufacture of electronic device, involves contacting amorphous carbon film with metals chosen from gallium, indium, tin and antimony.

FUJITA JUNICHI, FUJITA J I, FUJITA J

Process for elaboration of graphene, useful e.g. in nanoelectronics, comprises depositing layer comprising amorphous carbon on substrate and annealing layer by photonic- and/or electronic-irradiation to obtain layer comprising graphene.

ZENASNI A, AJIJEU J

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C